Transcript Slides_11 - Real-Time Embedded Systems Lab
7/23
Flash Memory
Computer Science & Engineering Department Arizona State University Tempe, AZ 85287 Dr. Yann-Hang Lee [email protected]
(480) 727-7507
Flash Memory
A type of EEPROM (Electrically-Erasable programmable Read-Only Memory)
an older type of memory that used UV-light to erase
Non-volatile, solid state technology
Relatively limited lifespan
Information is stored in an array of memory cells made from floating-gate (FG) transistors
Packaged inside a memory card:
Extremely durable Can withstand intense pressure Immersion in water
Better kinetic shock resistance than hard disks
set 4 -- 1
USB Flash Memory
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USB connector USB mass storage controller device Test points Flash memory chip Crystal oscillator LED Write-protect switch (Optional) Space for second flash memory chip
set 4 -- 2
Floating Gate Operation
Not programmed
No electronics trapped on floating gate WL=1 turns on transistor, pulling Bitline low Data out = 1 As floating gate has no effect
Programmed
Electronics is trapped on floating gate Increase threshold voltage Transistor remains off when WL=1 Bitline=1 and Data out=0
Sept 2007 3
Flash Memory Operations
Write: programmed or not Read: Erase: make cells non programmed
write operation read operation erase operation set 4 -- 4
NOR and NAND Flash
NOR
BL = NOR (all WL’s of non programmed cells) The word line of selected row high Un-programmed = 1 Programmed = 0
NAND
BL= NAND (all WL’s of non programmed cells ) All word lines high by default with exception of selected row Un-programmed = 1 Programmed = 0
set 4 -- 5
Comparison of NOR and NAND Flash
NAND Flash cells are 60% smaller than NOR Flash cells Wear leveling: limit in the number of times NAND Flash blocks can reliably be programmed and erased. NAND Flash array: grouped into a series of blocks, which are the smallest erasable entities Random access time on NOR Flash < 0.075μs; on NAND Flash, for the first byte is significantly slower > 10μs NAND Flash: faster PROGRAM and ERASE times Advantage Disadvantage Applications
NAND
Fast PROGRAMs Fast ERASEs Byte Slow random access Byte PROGRAMs difficult File (disk) applications Voice, data, video recorder Any large sequential data
NOR
Random access PROGRAMs possible Slow PROGRAMs Slow ERASEs Replacement of EPROM Execute directly from nonvolatile memory
set 4 -- 6
Parallel and Serial Flash Chips
Parallel interface
Direct control of flash memory operations Read, program, erase (sector or chip), write inhibit, standby
Byte programming
software id phase load address and data Program (
20
s
)
Serial interface (SPI, I2C, microwire)
Send commands and receive responses Read, program (auto-increment), erase Status, write protection, etc.
set 4 -- 7
Coldfire Flash Module
Interfaces
As a read-only memory to the ColdFire core A backdoor mapping for all program, erase, and verify operations, as well as providing a read datapath for the DMA. May be programmed via the EzPort, which is a serial Flash programming
Flash Configuration field (24 bytes)
Stored in flash memory base+0x400 Protection and access restriction On reset, read in the field to Flash controller
Flash program using BDM
set 4 -- 8